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"An improved evaluation of the DC performance of carbon nanotube field-effect transistors",
Smart Mater. Struct. (UK), vol. 15, no. 1, pp. 9 - 13, 2006 .
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C
"Carbon nanotube transistors: an evaluation",
Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 5276, no. 1, Perth, SA, Australia, pp. 1 - 10, 2004 .
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E
"Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors",
IEEE Trans. Nanotechnol. (USA), vol. 2, no. 3, pp. 175 - 80, In Press .
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"Extrapolated f<sub>max</sub> for carbon nanotube field-effect transistors",
Nanotechnology (UK), vol. 17, no. 1, pp. 300 - 4, 2006 .
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"Electrostatics of partially gated carbon nanotube FETs",
IEEE Trans. Nanotechnol. (USA), vol. 3, no. 2, pp. 281 - 6, 2004 .
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H
"High-frequency capability of Schottky-barrier carbon nanotube FETs",
Diffus. Defect Data B, Solid State Phenom. (Switzerland), vol. 121-123, pp. 693 - 6, 2007 .
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M
"Method for predicting f<sub>T</sub> for carbon nanotube FETs",
IEEE Trans. Nanotechnol. (USA), vol. 4, no. 6, pp. 699 - 704, 2005 .
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Q
"Quantum capacitance in nanoscale device modeling",
J. Appl. Phys. (USA), vol. 96, no. 9, pp. 5180 - 4, 2004 .
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T
"Towards a compact model for Schottky-barrier nanotube FETs",
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), Sydney, NSW, Australia, pp. 303 - 6, 2002 .
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