by Faculty
Filters: author is PulfreyIn Press
"Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs",
IEEE Trans. Nanotechnol. (USA), vol. 2, no. 3, pp. 181 - 5, In Press .
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"Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors",
IEEE Trans. Nanotechnol. (USA), vol. 2, no. 3, pp. 175 - 80, In Press .
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2010
"Bias-dependent amino-acid-induced conductance changes in semi-metallic carbon nanotubes",
Nanotechnology, vol. 21: IOP Publishing Ltd, 01/2010.
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"Modeling sensing mechanisms in carbon nanotube biosensors",
Sensors, 2010 IEEE : IEEE, 01/11/2010.
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2009
"Analytical Modeling of the Transistor Laser",
Journal of Selected Topics in Quantum Electronics, vol. 15, issue 3, pp. 594-603, 05/2009.
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"Comment on "Curvature effects on electronic properties of small radius nanotube" [Appl. Phys. Lett. 91, 033102 (2007)]",
Applied Physics Letters, vol. 94, 05/2009.
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"Basis-Set Choice for DFT/NEGF Simulations of Carbon Nanotubes",
Journal of Computational Electronics, vol. 8, issue 1: Springer Science+Business Media Inc., pp. 1-9, 03/2009.
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2008
"Biomolecular Sensing Using Carbon Nanotubes: A Simulation Study",
International Journal of High Speed Electronics and Systems, vol. 18, issue 4, pp. 879-887, December 2008.
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"Small-signal Modeling of the Transistor Laser in Common-Emitter and Common-Base Configurations",
IEEE Lasers and Electro-Optics Society, 21st Annual Meeting, pp. 681-682, 9/11/2008.
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"Effect of Single-Biomolecule Adsorption on the Electrical Properties of Short Carbon Nanotubes",
IEEE Nanotechnolgy 2008, pp. 230-232, 18/08/2008.
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"Common-Emitter and Common-Base Small-Signal Operation of the Transistor Laser",
Applied Physics Letters, vol. 93, issue 14, pp. 143503, 10/2008.
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"Small-signal modelling of the transistor laser including the quantum capture and escape lifetimes",
Applied Physics Letters, vol. 93, issue 10, pp. 103509, 09/2008.
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2007
"Carbon nanotube field-effect transistors: an assessment",
Diffus. Defect Data B, Solid State Phenom. (Switzerland), vol. 121-123, pp. 503 - 6, 2007 .
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"High-frequency capability of Schottky-barrier carbon nanotube FETs",
Diffus. Defect Data B, Solid State Phenom. (Switzerland), vol. 121-123, pp. 693 - 6, 2007 .
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2006
"An improved evaluation of the DC performance of carbon nanotube field-effect transistors",
Smart Mater. Struct. (UK), vol. 15, no. 1, pp. 9 - 13, 2006 .
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"Assessment of carbon nanotube FETs for high-frequency performance",
Device Research Conference (IEEE Cat. No. 06TH8896), University Park, PA, USA, pp. 167 - 9, 2006 .
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"Extrapolated f<sub>max</sub> for carbon nanotube field-effect transistors",
Nanotechnology (UK), vol. 17, no. 1, pp. 300 - 4, 2006 .
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"Green's function calculations for semi-infinite carbon nanotubes",
Phys. Status Solidi B (Germany), vol. 243, no. 2, pp. 442 - 8, 2006 .
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"Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors",
J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 24, no. 3, Canada, pp. 708 - 12, 2006 .
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2005
"Method for predicting f<sub>T</sub> for carbon nanotube FETs",
IEEE Trans. Nanotechnol. (USA), vol. 4, no. 6, pp. 699 - 704, 2005 .
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"Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes",
Solid-State Electron. (UK), vol. 49, no. 12, pp. 1969 - 73, 2005 .
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2004
"Carbon nanotube transistors: an evaluation",
Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 5276, no. 1, Perth, SA, Australia, pp. 1 - 10, 2004 .
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"Electrostatics of partially gated carbon nanotube FETs",
IEEE Trans. Nanotechnol. (USA), vol. 3, no. 2, pp. 281 - 6, 2004 .
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"Quantum capacitance in nanoscale device modeling",
J. Appl. Phys. (USA), vol. 96, no. 9, pp. 5180 - 4, 2004 .
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2002
"Full-chip power-supply noise: the effect of on-chip power-rail inductance",
Int. J. High Speed Electron. Syst. (Singapore), vol. 12, no. 2, St. Croix, VI, USA, pp. 573 - 82, 2002 .
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"Towards a compact model for Schottky-barrier nanotube FETs",
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), Sydney, NSW, Australia, pp. 303 - 6, 2002 .
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2001
"High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes",
IEEE Trans. Electron Devices (USA), vol. 48, no. 3, pp. 486 - 9, 2001 .
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"Performance predictions for n-p-n Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN HBTs",
IEEE Trans. Electron Devices (USA), vol. 48, no. 3, pp. 597 - 602, 2001 .
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2000
"Application of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors",
J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 18, no. 2, Ottawa, Ont., Canada, pp. 775 - 9, 2000 .
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"Evaluation of AlGaN-GaN HBTs",
WOCSDICE 2000. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits, Aegean Sea, Greece, pp. VIII-15, VIII-16 -, 2000 .
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"Highly selective GaN/AlGaN/GaN UV photodiodes",
WOCSDICE 2000. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits, Aegean Sea, Greece, pp. XV-9, XV-10 -, 2000 .
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1999
"Compact modeling of high-frequency, small-dimension bipolar transistors",
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), Perth, WA, Australia, pp. 81 - 5, 1999 .
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"Extrapolated f<sub>max</sub> of heterojunction bipolar transistors",
IEEE Trans. Electron Devices (USA), vol. 46, no. 2, pp. 301 - 9, 1999 .
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"Towards an AlGaN, solar-blind, p-i-n photodetector",
Phys. Status Solidi A (Germany), vol. 176, no. 1, Montpellier, France, pp. 169 - 73, 1999 .
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1998
"Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors",
J. Appl. Phys. (USA), vol. 84, no. 9, pp. 4959 - 65, 1998 .
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"The influence of Coulomb enhancement on the modulation properties of quantum-well lasers",
IEEE J. Quantum Electron. (USA), vol. 34, no. 2, pp. 318 - 24, 1998 .
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1997
"A versatile SPICE model for quantum-well lasers",
IEEE J. Quantum Electron. (USA), vol. 33, no. 2, pp. 246 - 54, 1997 .
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"A microscopic view of quasi-ballistic transport in HBTs",
WOCSDICE 97. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits, Scheveningen, Netherlands, pp. 126 - 7, 1997 .
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"Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors",
IEEE Trans. Electron Devices (USA), vol. 44, no. 4, pp. 618 - 26, 1997 .
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1996
"An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices",
Solid-State Electron. (UK), vol. 39, no. 6, pp. 827 - 32, 1996 .
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"The influence of a transverse-effective-mass difference on the current at an abrupt heterojunction",
J. Appl. Phys. (USA), vol. 79, no. 8, pp. 4203 - 10, 1996 .
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1995
"A physics-based HBT SPICE model for large-signal applications",
IEEE Trans. Electron Devices (USA), vol. 42, no. 1, pp. 8 - 14, 1995 .
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"An analytical expression for the current in short-base transistors",
Solid-State Electron. (UK), vol. 38, no. 8, pp. 1431 - 6, 1995 .
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"On the design of composite-collector HBTs",
Solid-State Electron. (UK), vol. 38, no. 6, pp. 1275 - 8, 1995 .
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1994
"An analysis of space-charge-region recombination in HBT's",
IEEE Trans. Electron Devices (USA), vol. 41, no. 4, pp. 476 - 83, 1994 .
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1993
"Analysis of the transistor-related noise in integrated p-i-n-HBT optical receiver front-ends",
IEEE Trans. Electron Devices (USA), vol. 40, no. 12, pp. 2204 - 10, 1993 .
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"Bipolar effects on the signal delay time in HBTs at high currents",
IEEE Trans. Electron Devices (USA), vol. 40, no. 1, pp. 44 - 8, 1993 .
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"Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's",
IEEE Trans. Electron Devices (USA), vol. 40, no. 6, pp. 1183 - 5, 1993 .
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"Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs",
[1993] Conference Proceedings Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, pp. 417 - 19, 1993 .
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1992
"A new method for estimating the electron concentration in the 2-dimensional electron gas in MODFETs",
Solid-State Electron. (UK), vol. 35, no. 12, pp. 1779 - 82, 1992 .
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"Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs",
Solid-State Electron. (UK), vol. 35, no. 1, pp. 113 - 15, 1992 .
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"Memory switching effects in a-Si/c-Si heterojunction bipolar structures",
IEEE Electron Device Lett. (USA), vol. 13, no. 8, pp. 396 - 8, 1992 .
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1991
"Reconciliation of methods for estimating <i>f</i><sub>max</sub> for microwave heterojunction transistors",
IEEE Trans. Electron Devices (USA), vol. 38, no. 8, pp. 1685 - 92, 1991 .
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"The cut-off frequency of base-graded and junction-graded Al<sub>x</sub>Ga<sub>1-x</sub>As DHBTs",
Solid-State Electron. (UK), vol. 34, no. 12, pp. 1325 - 8, 1991 .
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1990
"An investigation of <i>pnp</i> polysilicon emitter transistors",
Solid-State Electron. (UK), vol. 33, no. 7, pp. 813 - 18, 1990 .
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"A phenomenological approach to estimating transit times in GaAs HBTs",
IEEE Trans. Electron Devices (USA), vol. 37, no. 10, pp. 2113 - 20, 1990 .
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"The Kronig-Penney approximation: may it live on",
IEEE Trans. Educ. (USA), vol. 33, no. 4, pp. 355 - 8, 1990 .
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1989
"A criterion for stationary domain formation in GaAs MESFETs",
IEEE Trans. Electron Devices (USA), vol. 36, no. 5, pp. 872 - 8, 1989 .
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"Series resistance calculations for polysilicon tunnel junction emitter transistors",
Can. J. Phys. (Canada), vol. 67, no. 4, Ottawa, Ont., Canada, pp. 218 - 20, 1989 .
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"The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors",
IEEE Trans. Electron Devices (USA), vol. 36, no. 10, pp. 2173 - 82, 1989 .
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1988
"An analysis of the DC and small-signal AC performance of the tunnel emitter transistor",
IEEE Trans. Electron Devices (USA), vol. 35, no. 2, pp. 188 - 94, 1988 .
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"An improved analytic model for the metal-insulator-semiconductor tunnel junction",
IEEE Trans. Electron Devices (USA), vol. 35, no. 10, pp. 1656 - 63, 1988 .
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"Thermal stressing of bipolar transistors with metal-insulator-semiconductor heterojunction emitters",
Appl. Phys. Lett. (USA), vol. 52, no. 20, pp. 1664 - 6, 1988 .
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1987
"A comparison of CMOS circuit techniques: differential cascode voltage switch logic versus conventional logic",
IEEE J. Solid-State Circuits (USA), vol. SC-22, no. 4, pp. 528 - 32, 1987 .
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"A photovoltaic-powered system for medium-head pumping",
Sol. Energy (USA), vol. 38, no. 4, pp. 255 - 65, 1987 .
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1986
"Design procedures for differential cascode voltage switch circuits",
IEEE J. Solid-State Circuits (USA), vol. SC-21, no. 6, pp. 1082 - 7, 1986 .
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"Modelling the DC performance of GaAs homojunction bipolar transistors",
Solid-State Electron. (UK), vol. 29, no. 7, pp. 713 - 23, 1986 .
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1985
"Accurate, short series approximations to Fermi-Dirac integrals of order -1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2",
J. Appl. Phys. (USA), vol. 57, no. 12, pp. 5271 - 4, 1985 .
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"A photovoltaic-powered system for medium head pumping",
Conference Record of the Eighteenth IEEE Photovoltaic Specialists Conference - 1985 (Cat. No.86CH2208-7), Las Vegas, NV, USA, pp. 1637 - 42, 1985 .
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"Arithmetic processor chip for robot control",
1985 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers, Taipei, Taiwan, pp. 337 - 41, 1985 .
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"High-gain bipolar transistors with polysilicon tunnel junction emitter contacts",
IEEE Trans. Electron Devices (USA), vol. ED-32, no. 7, pp. 1307 - 13, 1985 .
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"The emitter-injection efficiency and emitter effective surface-recombination velocity in polysilicon emitter transistors",
Can. J. Phys. (Canada), vol. 63, no. 6, pp. 693 - 4, 1985 .
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"The effect of metal work function on current conduction in metal-insulator-semiconductor tunnel junctions",
J. Appl. Phys. (USA), vol. 57, no. 2, pp. 373 - 6, 1985 .
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1984
"A new method based on the superposition principle for the calculation of the two-dimensional potential in a buried-channel charge-coupled device",
IEEE Trans. Electron Devices (USA), vol. ED-31, no. 7, pp. 999 - 1001, 1984 .
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"A new MOS photon-counting sensor operating in the above-breakdown regime",
IEEE Trans. Electron Devices (USA), vol. ED-31, no. 10, pp. 1420 - 7, 1984 .
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1982
"A non-adulterating method for the measurement of minority carrier diffusion length in silicon",
Conference Record of the Sixteenth IEEE Photovoltaic Specialists Conference - 1982, San Diego, CA, USA, pp. 1249 - 51, 1982 .
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"New experimental evidence for minority-carrier reflection at negative-barrier MIS contacts",
IEEE Trans. Electron Devices (USA), vol. ED-29, no. 6, pp. 1018 - 21, 1982 .
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1981
"A fine line silicon shadow mask for inversion layer solar cells",
IEEE Electron Device Lett. (USA), vol. ED-2, no. 3, pp. 61 - 3, 1981 .
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"Development of fine line silicon shadow masks for the deposition of solar cell grids",
Fifteenth IEEE Photovoltaic Specialists Conference - 1981, Kissimmee, FL, USA, pp. 527 - 9, 1981 .
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"Induced back-surface field solar cells on p-type silicon substrates",
Appl. Phys. Lett. (USA), vol. 39, no. 1, pp. 83 - 5, 1981 .
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"Induced back surface field and MISIM solar cells on pSi substrates",
Fifteenth IEEE Photovoltaic Specialists Conference - 1981, Kissimmee, FL, USA, pp. 1409 - 11, 1981 .
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1980
"An induced back surface field solar cell employing a negative barrier metal-insulator-semiconductor contact",
J. Appl. Phys. (USA), vol. 51, no. 7, pp. 3926 - 9, 1980 .
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"MIS solar cells with diffused back surface fields, and diffused junction solar cells with MIS back surface fields",
Fourteenth IEEE Photovoltaic Specialists Conference 1980, San Diego, CA, USA, pp. 1345 - 9, 1980 .
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"On the stability of MIS solar cells",
IEEE Electron Device Lett. (USA), vol. ED1, no. 6, pp. 107 - 9, 1980 .
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"The superposition principle for homojunction solar cells",
IEEE Trans. Electron Devices (USA), vol. ED-27, no. 4, pp. 771 - 6, 1980 .
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1979
"An investigation of dark current and photocurrent superposition in photovoltaic devices",
Solid-State Electron. (UK), vol. 22, no. 3, pp. 265 - 70, 1979 .
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"MIS solar cells with back surface fields",
Appl. Phys. Lett. (USA), vol. 35, no. 3, pp. 258 - 60, 1979 .
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"New experimental evidence for minority-carrier MIS diodes",
Appl. Phys. Lett. (USA), vol. 34, no. 4, pp. 295 - 7, 1979 .
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"New experimental evidence for minority carrier MIS diodes",
Commission of the European Communities, 2nd E.C. Photovoltaic Solar Energy Conference, Berlin, West Germany, pp. 58 - 64, 1979 .
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"Properties of reactively-sputtered copper oxide thin films",
Thin Solid Films (Switzerland), vol. 61, no. 1, pp. 89 - 98, 1979 .
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1978
"MIS solar cells: a review",
IEEE Trans. Electron Devices (USA), vol. ED-25, no. 11, pp. 1308 - 17, 1978 .
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"On the fill factor of solar cells",
Solid-State Electron. (UK), vol. 21, no. 3, pp. 519 - 20, 1978 .
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"The photovoltaic properties of thin copper oxide films",
Thirteenth IEEE Photovoltaic Specialists Conference-1978, Washington, DC, USA, pp. 180 - 3, 1978 .
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1977
"A minority carrier MIS solar cell",
Solid-State Electron. (UK), vol. 20, no. 5, pp. 455 - 7, 1977 .
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"Kinetics of plasma anodization of aluminium",
J. Electrochem. Soc. (USA), vol. 124, no. 6, pp. 891 - 7, 1977 .
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"MIS solar cells: a review",
1977 International Electron Devices Meeting, Washington, DC, USA, pp. 47B -, 1977 .
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1976
"A model for Schottky-barrier solar cell analysis",
J. Appl. Phys. (USA), vol. 47, no. 5, pp. 2113 - 19, 1976 .
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"The structure and Schottky barrier diode properties of polycrystalline GaAs films grown by the close spaced vapour transport technique on Mo substrates",
Twelfth IEEE Photovoltaic Specialists Conference 1976, Baton Rouge, LA, USA, pp. 962 - 6, 1976 .
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1975
"Analysis of silicon Schottky barrier solar cells",
11th IEEE Photovoltaic Specialists Conference, Scottsdale, AZ, USA, pp. 371 - 5, 1975 .
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"The deformation of anodic films during the plasma anodization of Al-Si structures",
J. Electrochem. Soc. (USA), vol. 122, no. 11, pp. 1553 - 6, 1975 .
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