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TitleAuthorJournalVolpp.Yearsort icon
The Effect of Thermal Nitridation-Based Defect Engineering on Phosphorus Diffusion in SiGe:C Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, and Guangrui (Maggie) XiaJ. of Physics D9999
Design considerations of biaxially tensile-strained germanium-on-silicon lasers Li, Xiyue ; Li, Zhiqiang ; Li, Simon ; Chrostowski, Lukas ; Xia, Guangrui Maggie Semiconductor Science and Technology310650152016
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping Yiheng Lin; Wei Shi; Jizhong Li; Ting-Chang Chang; Ji-Soo Park; Jennifer Hydrick; Zigang Duan; Mark Greenberg; James G. Fiorenza; Lukas Chrostowski; Guangrui XiaarXiv2016
Study of Near-surface Stresses in Silicon around Through Silicon Vias at Elevated Temperatures by Raman spectroscopy and Simulations Ye Zhu, Jiye Zhang, Hong Yu Li, Chuan Seng Tan and Guangrui (Maggie) XiaIEEE Transactions on Device and Material Reliability15142-1482015
Coupled Dopant Diffusion and Segregation in Inhomogeneous SiGe Alloys: Experiments and Modeling Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer and Guangrui (Maggie) XiaJOURNAL OF APPLIED PHYSICS117214901-1 to 214901-72015
Enhanced Ge-Si Interdiffusion in High Phosphorus-Doped Germanium on Silicon Feiyang Cai, Yuanwei Dong, Yew Heng Tan, Chuan Seng Tan and Guangrui (Maggie) XiaSemiconductor Science and Technology2015
Effects of Carbon on Phosphorus Diffusion in SiGe:C and the Implications on Phosphorus Diffusion Mechanisms Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, Bernhard Benna, Rick Wise and Guangrui (Maggie) XiaJOURNAL OF APPLIED PHYSICS116144902014
On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures Yuanwei Dong, Winston Chern, Patricia M Mooney, Judy L Hoyt and Guangrui (Maggie) XiaSemiconductor Science and Technology29112014
Experiments and modeling of Si-Ge interdiffusion with partial strain relaxation in epitaxial SiGe heterostructures Yuanwei Dong, Patricia M. Mooney, Feiyang Cai, Dalaver Anjum, Naeem Ur-Rehman, Xixiang Zhang, and Guangrui (Maggie) XiaECS Journal of Solid State Science and Technology2014
Si-Ge interdiffusion, dopant diffusion and segregation in SiGe and SiGe: C based devices Guangrui (Maggie) Xia, Yuanwei DongMicro- and Nanoelectronics Emerging Device Challenges and Solutions2014
The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction K. J. Schmidt, Y. Lin, M. Beaudoin, G. Xia, S. K. O'Leary, G. Yue, and B. YanCanadian Journal of Physics 2014
Integration of Low-Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief Kaushik Ghosh, Jiye Zhang, Lin Zhang, Yuanwei Dong, Hongyu Li, Cher Ming Tan, Guangrui Xia, and Chuan Seng TanApplied Physics Express 52012
A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range Yuanwei Dong, Yiheng Lin, Simon Li, Steve McCoy, and Guangrui XiaJ. Appl. Phys. 1110449092012
Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, and Cheng Tung HuangAPPLIED PHYSICS LETTERS990121062011
On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs Chih-Hao Dai, Ting-Chang Chang, An-Kuo Chu, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Osbert Cheng, and Cheng-Tung HuangIEEE Electron Device Letters2011
Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih, Hua-Mao Chen, Bai-Shan Dai, Guangrui Xia, Osbert Cheng, and Cheng Tung HuangAPPLIED PHYSICS LETTERS982011
Monolithic integration of AlGaAs distributed Bragg reflectors on virtual Ge substrates via aspect ratio trapping Yiheng Lin; Wei Shi; Jizhong Li; Ting-Chang Chang; Ji-Soo Park; Jennifer Hydrick; Zigang Duan; Mark Greenberg; James Fiorenza; Lukas Chrostowski; Guangrui XiaInternational SiGe Technology and Device Meeting2010
Enhanced gate-induced foating-body effect in PD SOI MOSFET under external mechanical strain Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Tsung Tsai, Wen-Hung Lo, Szu-Han Ho, Guangrui Xia, Osbert Cheng, Cheng Tung HuangSurface & Coatings Technology2052010
Si-Ge Interdiffusion under Oxidizing Conditions in Epitaxial SiGe Heterostructures with High Compressive Stress Guangrui Xia; Judy L. HoytAPPLIED PHYSICS LETTERS961221072010
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Cheng, Osbert Cheng and Cheng Tung HuangIEEE Electron Device Letters2010
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor Yang, B; Takalkar, R. ; Ren, Z. ; Black, L. ; Dube, A. ; Weijtmans, J.W. ; Li, J. ; Johnson, J.B. ; Faltermeier, J. ; Madan, A. ; Zhu, Z. ; Turansky, A. ; Xia, G. ; Chakravarti, A. ; Pal, R. ; Chan, K. ; Reznicek, A. ; Adam, T.N. ; de SouIEEE International Electron Device Meeting2008
PDSOI nMOSFETs with Embedded Phosphorus-doped SiC Stressors for CMOS Technology Z. Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, G. Xia, Z. Zhu, A. Madan, T. Pinto, T.Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T.Kanarsky, I. Lauer, D.-G. Park, D. Sadana, and G. ShahidiIEEE Symp. on VLSI Tech. 20082008
“Strained Si-Ge Heterostructure Channel Materials for Bulk and Ultra-thin Body MOSFETs Judy L Hoyt, Cait Ni Chleirigh, Leonardo Gomez, Ingvar Aberg and Guangrui XiaMaterials Research Society Symposium Proceedings2007
Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors Guangrui Xia, Michael Canonico, and Judy L. HoytJournal of Applied Physicsvol. 1010449012007
“Interdiffusion in SiGe/Si Epitaxial Heterostructures Guangrui Xia, Michael Canonico, and Judy L. Hoyt2006 International SiGe Technology and Device Meeting2006
Interdiffusion in strained Si/Strained SiGe epitaxial heterostructures Guangrui Xia, Michael Canonico, and Judy L. HoytSemiconductor Science and Technology222006
Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si1-yGey/Si heterostructures on relaxed Si1-xGex substrates Guangrui Xia, Michael Canonico, O. O. Olubuyide and Judy L. HoytApplied Physics Letters882006
Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy Dalaver Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, and Robert HullMaterials Research Society Symposium Proceedings8642005
Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging J. Li, D. Anjum, R. Hull, G. Xia and J. L. HoytApplied Physics Letters872005
“Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li,R. Hull, N. Klymko, and J. L. HoytIEEE Transactions on Electron Devices512004
Atomistic simulation of radiation damage to carbon nanotube F. Z. Cui, Z. J. Chen, J. Ma, G. R. Xia, Y. ZhaiPhysics Letters A2952002
Strained silicon MOSFET technology J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, D. A.AntoniadisInternational Electron Devices Meeting 20022002
Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics M.L. Swiggers, G. Xia, J.D. Slinker, A.A. Gorodetsky, G.G. Malliaras, R.L. Headrick, Brian T.Weslowski, R.N. Shashidhar and C.S. DulceyApplied Physics Letters792001
Atomistic simulation of radiation damage to carbon nanotubes Fuzhai Cui, Guangrui Xia, An ChenProgress in Natural Sciences102000