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Thermalmechanical stress around copper through Si vias (TSVs) for 3D integration

Abstract

The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. This project investigates the stress distribution dependence on TSVs diameters and operation temperatures using micro-Raman and COMSOL simulations, and the impact on the keep-out-zone.

Project Description

Faculty Supervisor(s)

    Guangrui.Xia   

Researchers(s)

       

Research Area(s)