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“Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

Publication Type:

Journal Article

Authors:

Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li,R. Hull, N. Klymko, and J. L. Hoyt

Source:

IEEE Transactions on Electron Devices, Volume 51 (2004)

Faculty Member(s): 
Guangrui.Xia
Research Area(s): 
Electronics
Research Area(s): 
Materials and Fabrication Technology
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