On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs | Microsystems and Nanotechnology Group (MiNa)

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On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Publication Type:

Journal Article

Authors:

Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Cheng, Osbert Cheng and Cheng Tung Huang

Source:

IEEE Electron Device Letters (2010)

Faculty Member(s):

Research Area(s):

Materials and Fabrication Technology

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